In the recent decades, the Silicon carbide (SiC), turned out to be an excellent semiconductor material. Composed of carbon and silicon, it has been used in power applications, in which showed excellent performance, far superior to those of silicon.
Significant progress has been made in the field of the semiconductor industry, allowing the development of more and more sophisticated technologies for silicon carbide processing, which have resulted in semiconductor devices with excellent performance.
In facts, those devices have shown a remarkable capacity to reduce losses and a high switching speed in comparison to that offered by silicon. The use of silicon carbide (SiC) as a semiconductor begins to expand into multiple applications and is increasingly becoming the most suitable candidate to replace silicon in applications such as automotive and E-Bike motor control.
For these reasons, Bruckewell Semi decided to launch the production of the SiC Products, including the SiC Schottky Diode and SiC MOSFET, support the 650V to 1200V, and give the opportunity to its customers to take advantage of the benefits of SiC high-voltage power applications.
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